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International Scientific and Practical Conference
"Electronics and Information Technologies"
| Issue 10, Pages: A-88-A-91 |
| DOI: https://doi.org/10.30970/elit2018.A25 |
| Data Processing for Scanning Tunneling Spectroscopy Analysis of Metal and Semiconductor Areas in Nanoscale |
| T. Nenchuk, P. Galiy, Ya. Buzhuk, K. Korvats’ka |
| Algorithm for sequential actions and calculations is proposed, which yields the current-voltage curves (CVC) from the matrix of experimental data acquired by scanning tunneling spectroscopy analysis of metal-semiconductor planar systems. CVCs’ study in the vicinity of a zero-bias voltage range that corresponds to the width of the band gap of a semiconductor allows to expand the capabilities of existing software data processing systems and to increase the planar resolution and accuracy of determining the relative concentrations of metal and semiconductor on a nanoscale by means of a scanning tunneling microscope. To implement the analysis algorithm, a program has been developed with a user-friendly interface and the ability to visualize the data and to calculate the relative concentrations of the metal and semiconductor. |
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© Ivan Franko National University of Lviv, 2018
Developed and supported - Laboratory of high performance computing systems
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