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International Scientific and Practical Conference
"Electronics and Information Technologies"
| Issue 10, Pages: B-20-B-23 |
| DOI: https://doi.org/10.30970/elit2018.B06 |
| The Conductivity and Photoelectric Properties of β-Ga2O3 Thin Films |
| O. Bordun, B. Bordun, I. Kukharskyy, I. Medvid |
| Conductivity, photoconductivity and luminescence properties of β-Ga2O3 thin films deposited by high-frequency ion-plasma sputtering have been investigated depending on conditions and atmosphere of heat treatment. After annealing in a reducing atmosphere of hydrogen is a significant decrease in the resistivity of the films from the 1011 Ohm×cm for freshly prepared films to 106 Ohm×cm it was found. The analysis of the results was investigated. Irrespective of the composition of the atmosphere in annealing β-Ga2O3 thin films photoconductivity observed effect it was shown. Compare photoconductivity spectra with the spectra excitations of luminescence indicated that the photoconductivity of β-Ga2O3 thin films associated with band-band transitions with the creation of free charge carriers in the conduction band. |
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© Ivan Franko National University of Lviv, 2018
Developed and supported - Laboratory of high performance computing systems
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