|
International Scientific and Practical Conference
"Electronics and Information Technologies"
| Issue 10, Pages: B-41-B-44 |
| DOI: https://doi.org/10.30970/elit2018.B12 |
| Investigation of Porous Silicon Photoconductive Structures |
| P. Parandiy, L. Monastyrskii |
| Porous silicon layers photoconductive and electrical properties obtained by electrochemical etching of silicon have been investigated. Photoconductive and current-voltage properties depend on structure morphology are determined by not only properties of modified layer, but presence of charge carriers’ traps. The photosensitivity of structures with PS layers is determined by thickness of porous layer. |
|
© Ivan Franko National University of Lviv, 2018
Developed and supported - Laboratory of high performance computing systems
|