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International Scientific and Practical Conference
"Electronics and Information Technologies"
| Issue 10, Pages: B-5-B-8 |
| DOI: https://doi.org/10.30970/elit2018.B02 |
| Transformation of Nanostructured Voids in the Crystallized GeS2-Ga2S3-CsCl Glasses |
| H. Klym, A. Ingram, I. Karbovnyk, O. Shpotyuk |
| Transformation of voids in crystallized (80GeS2-20Ga2S3)100-x(CsCl)x, x = 0; 5; 10; 15 chalcogenide glasses was studied by positron annihilation lifetime spectroscopy. The CsCl content in GeS2-Ga2S3 glassy matrix changed the defect-related component in positron lifetime spectra and confirmed the structural void agglomeration in comparison with the base glass. A larger amount of CsCl in (80GeS2-20Ga2S3)85(CsCl)15 glass resulted in void fragmentation due to loosening of the structure. |
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© Ivan Franko National University of Lviv, 2018
Developed and supported - Laboratory of high performance computing systems
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